Windows 10: Combining Intel Optane and Intel QLC 3D NAND technologies

Brink · Aug 8, 2018

Intel is reimagining the memory-and-storage market and igniting a new era of computing with the combination of Intel Optane and Intel QLC 3D NAND technologies. (Credit: Peter Belanger Photography)

What’s New: Intel outlines vision for reimagining memory and storage with Optane + QLC. Intel is reimagining the memory-and-storage market and igniting a new era of computing with a combination of two unique memory technologies in memory and storage solutions no one in the industry currently offers: Intel® Optane™ and Intel® QLC 3D NAND.
“Intel Optane and 3D NAND technologies ensure computer and storage architects and developers can access vital data where and when they need it. The two technologies bridge the wide gap that exists between data that’s being worked on and data that’s waiting to be accessed.”
– Rob Crooke, senior vice president and general manager of the Non-Volatile Memory Solutions Group at Intel
Why It’s Important: The combination of Intel Optane and Intel QLC 3D NAND technologies allows customers to accelerate the speed of their most frequently accessed data, while utilizing the value flash technology delivers over HDDs for massive capacity storage. Intel’s aim is to break bottlenecks and deliver better solutions to unleash the value of data.

How It’s Used: Optane has already had an impact throughout the world. Here are a few examples:

Intel Optane SSDs integrated into IBM Cloud’s bare metal servers have enabled up to 7.5 times improvement — especially for applications that have high write-intensive operations.

Using Intel Optane Technology, the University of Pisa has reduced MRI scan times from 42 minutes to 4 minutes.

Intel Optane has enabled IFLYTEK, a Chinese information technology company, to enable faster voice and facial recognition services.

Intel’s QLC 3D NAND products announced today at Flash Memory Summit deliver new memory and storage solutions: Tencent, employing the new QLC PCIe Intel® SSD D5-P4320 in an initial production environment, increased by 10 times the number of customers served on a per-system basis.

How It’s Different: The Intel® SSD 660p (for client) and the Intel® SSD D5-P4320 (data center) are the world’s first QLC PCIe 3D NAND SSDs for their segments, offering the highest PCIe areal density on the market at an affordable price. With up to 2TB of storage in one drive for the 660p and 8TB for the P4320 (larger capacities coming later), these QLC SSDs have the capacity to replace hard drives. The 660p’s M.2 80mm form factor provides 2 times more capacity than TLC-based storage. In the data center, the P4320 enables users to store more, save more and do more than legacy solutions.

While Intel’s client solutions — including Intel Optane Memory and Intel Optane SSDs — have changed the PC space, Intel has set its sights on the data center. The challenges businesses face in managing vast amounts of data require the high performance of Intel Optane paired with the capacity-storage power of Intel QLC 3D NAND — two technologies that will transform the memory and storage tier.

More Context: Rob Crooke’s keynote address at Flash Memory Summit | Re-Architecting the Data Center for the Information Enlightenment Era (Rob Crooke Blog)
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Source: Intel Poised to Shape the Future of Memory and Storage with Optane + QLC | Intel Newsroom

:)

Brink · Aug 8, 2018

Micron and Intel Extend Their Leadership in 3D NAND Flash Memory

Announce Qualification of Industry’s First 4 bits/cell 3D NAND and Development of 96-Layer 3D NAND Structure

News Highlights

Intel-Micron delivers the 1st commercially available 1Tb – 4bits/cell (QLC) die in the history of semiconductors

Qualification of 4bits/cell 3D NAND on 64 layer 2nd Gen 3D NAND has been completed. 4bits/cell (QLC) provides 33% higher density compared to 3bits/cell (TLC)

3rd Generation 3D NAND uses 96 layers to maintain cost/density leadership

3RD Generation 3D NAND enables the industry’s highest Gb/mm2 areal density

BOISE, Idaho and SANTA CLARA, Calif., May 21, 2018 – Micron Technology Inc. and Intel Corporation today announced production and shipment of the industry’s first 4bits/cell 3D NAND technology. Leveraging a proven 64-layer structure, the new 4bits/cell NAND technology achieves 1 terabit (Tb) density per die, the world’s highest-density flash memory.

The companies also announced development progress on the third-generation 96-tier 3D NAND structure, providing a 50 percent increase in layers. These advancements in the cell structure continue the companies’ leadership in producing the world’s highest Gb/mm2 areal density.

Both NAND technology advancements—the 64-layer QLC and 96-layer TLC technologies —utilize CMOS under the array (CuA) technology to reduce die sizes and deliver improved performance when compared to competitive approaches. By leveraging four planes vs the competitors’ two planes, the new Intel and Micron NAND flash memory can write and read more cells in parallel, which delivers faster throughput and higher bandwidth at the system level.

The new 64-layer 4bits/cell NAND technology enables denser storage in a smaller space, bringing significant cost savings for read-intensive cloud workloads. It is also well-suited for consumer and client computing applications, providing cost-optimized storage solutions.

“With introduction of 64-layer 4bits/cell NAND technology, we are achieving 33 percent higher array density compared to TLC, which enables us to produce the first commercially available 1 terabit die in the history of semiconductors,” said Micron Executive Vice President, Technology Development, Scott DeBoer. “We’re continuing flash technology innovation with our 96-layer structure, condensing even more data into smaller spaces, unlocking the possibilities of workload capability and application construction.”

“Commercialization of 1Tb 4bits/cell is a big milestone in NVM history and is made possible by numerous innovations in technology and design that further extend the capability of our Floating Gate 3D NAND technology,” said RV Giridhar, Intel vice president, Non-Volatile Memory Technology Development. “The move to 4bits/cell enables compelling new operating points for density and cost in Datacenter and Client storage.”
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Source: https://newsroom.intel.com/news-rele...-flash-memory/

Brink · Aug 8, 2018

Delivering Intel Optane Technology to Mainstream Client Systems

Today, Intel announced the Intel® Optane™ SSD 800P, the latest addition to the growing Intel® Optane™ technology family of products. The 800P joins the Intel® Optane™ SSD 900P, designed for enthusiasts and professional users, and Intel Optane memory, an acceleration solution to speed up slower storage, like hard disk drives and SATA SSDs. Intel Optane technology delivers an unparalleled combination of high throughput, low latency, high quality of service and industry-leading endurance.

More: Storage and Memory News

Intel Optane SSD 800P enables fast system boot, speedy application load times and smooth multitasking. It is ideal for use as a standalone SSD, in a dual drive setup or in a multiple SSD RAID configuration (PCH-based or CPU-based), offering performance and flexibility to users. The drive also supports lower-power states, allowing it to operate in devices like laptops and 2 in 1 devices, as well as desktop systems. The 800P excels with low queue depth random workloads, where most client system activity takes place, and offers uncompromising responsiveness and throughput. The 800P is available in 58GB and 118GB capacities in the M.2 2280 form factor using an NVMe PCIe 3.0 x2 interface.

To find out more about Intel® Optane™ technology for client systems, visit Intel’s solid state drive page.

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Source: https://newsroom.intel.com/news/deli...lient-systems/

labeeman · Aug 8, 2018

Intel's radical Optane next-gen SSD

A couple of weeks ago Intel and Micron jointly announced their Xpoint - pronounced "cross point" - memory. Offering few details they claimed

3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.

3D Xpoint is the technology inside the Optane drive.

At last week's Flash Memory Summit, semiconductor analysts Jim Handy and Dave Eggleston, whose work I respect, offered their educated guesses on the Xpoint technology. I'm stealing freely from both.
What is it?

Xpoint is a form of resistance RAM (RRAM) based on technology that Micron bought with their acquisition of Numonyx in 2010. Numonyx was formed from Intel's NOR flash and STMicro's NAND flash businesses and was the first to ship Phase Change Memory (PCM) a form of RRAM where the junction material is heated to change its resistance, unlike filamentary types of RRAM.

Mr. Eggleston's conclusion is that Xpoint is a rebranded PCM or PCMS (S for selector) memory, which finds backing in a July req from Micron for

. . . engineers to support the development of advanced Phase Change Memory based non-volatile memory products. As a Process Integration Engineer, you will contribute to . . . [PCM] technology in R&D and subsequent transfer of the process to a production Fab.

In addition, Micron recently received a patent for "Accessing memory cells in parallel in a cross-point array" which refers chalcogenide materials and PCM. It's not certain, but PCMS is the clear favorite.
3D
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Source

Windows 10: Combining Intel Optane and Intel QLC 3D NAND technologies

Combining Intel Optane and Intel QLC 3D NAND technologies

Combining Intel Optane and Intel QLC 3D NAND technologies

Combining Intel Optane and Intel QLC 3D NAND technologies

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