Windows 10: Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage

Brink · Apr 10, 2019

Intel in April 2019 introduced Intel Optane memory H10 with solid-state storage. The device combines the responsiveness of Intel Optane technology with the storage capacity of Intel Quad Level Cell (QLC) 3D NAND technology in an M.2 form factor. (Credit: Intel Corporation)

What’s New: Intel today revealed details about Intel® Optane™ memory H10 with solid-state storage – an innovative device that combines the superior responsiveness of Intel Optane technology with the storage capacity of Intel® Quad Level Cell (QLC) 3D NAND technology in a single space-saver M.2 form factor.
“Intel Optane memory H10 with solid-state storage features the unique combination of Intel Optane technology and Intel QLC 3D NAND – exemplifying our disruptive approach to memory and storage that unleashes the full power of Intel-connected platforms in a way no else can provide.”
–Rob Crooke, Intel senior vice president and general manager of the Non-Volatile Memory Solutions Group
Why It’s Important: Combining Intel Optane technology with Intel QLC 3D NAND technology on a single M.2 module enables Intel Optane memory expansion into thin and light notebooks and certain space-constrained desktop form factors – such as all-in-one PCs and mini PCs. The new product also offers a higher level of performance not met by traditional Triple Level Cell (TLC) 3D NAND SSDs today and eliminates the need for a secondary storage device.

How It’s Different: Intel’s leadership in computing infrastructure and design allows the company to utilize the value of the platform in its entirety (software, chipset, processor, memory and storage) and deliver that value to the customer. The combination of high-speed acceleration and large SSD storage capacity on a single drive will benefit everyday computer users, whether they use their systems to create, game or work. Compared to a standalone TLC 3D NAND SSD system, Intel Optane memory H10 with solid-state storage enables both faster access to frequently used applications and files and better responsiveness with background activity.

8th Generation Intel® Core™ U-series mobile platforms featuring Intel Optane memory H10 with solid state storage will be arriving through major OEMs starting this quarter. With these platforms, everyday users will be able to:

Launch documents up to 2 times faster while multitasking.

Launch games 60% faster while multitasking.

Open media files up to 90% faster while multitasking.

SSDs with Intel Optane memory are the fastest compared to NAND SSDs in the majority of common client use cases. Intel-based platforms with Intel Optane memory adapt to everyday computing activities to optimize the performance for the user’s most common tasks and frequently used applications. With offerings of up to 1TB of total storage, Intel Optane memory H10 with solid state storage will have the capacity users need for their apps and files today — and well into the future.

The Intel Optane memory H10 with solid-state storage will come in the following capacities, 16GB (Intel Optane memory) + 256GB (storage); 32GB (Intel Optane memory) + 512GB (storage); and 32GB (Intel Optane memory) + 1TB storage.

When/Where You Can Get It: In addition to the first systems being made available through OEMs (including Dell*, HP*, ASUS*, Acer* and others), it will also be available on-shelf at Best Buy* and Costco*. Check out the Intel Optane memory product page for more information.

More Context: Storage and Memory News
Click to expand...

Source: Intel Optane Technology and Intel QLC NAND Technology Come Together on a Single Drive | Intel Newsroom

Tweet

— Twitter API (@User) View on Twiiter

:)

Brink · Apr 10, 2019

Combining Intel Optane and Intel QLC 3D NAND technologies

Intel is reimagining the memory-and-storage market and igniting a new era of computing with the combination of Intel Optane and Intel QLC 3D NAND technologies. (Credit: Peter Belanger Photography)

What’s New: Intel outlines vision for reimagining memory and storage with Optane + QLC. Intel is reimagining the memory-and-storage market and igniting a new era of computing with a combination of two unique memory technologies in memory and storage solutions no one in the industry currently offers: Intel® Optane™ and Intel® QLC 3D NAND.
“Intel Optane and 3D NAND technologies ensure computer and storage architects and developers can access vital data where and when they need it. The two technologies bridge the wide gap that exists between data that’s being worked on and data that’s waiting to be accessed.”
– Rob Crooke, senior vice president and general manager of the Non-Volatile Memory Solutions Group at Intel
Why It’s Important: The combination of Intel Optane and Intel QLC 3D NAND technologies allows customers to accelerate the speed of their most frequently accessed data, while utilizing the value flash technology delivers over HDDs for massive capacity storage. Intel’s aim is to break bottlenecks and deliver better solutions to unleash the value of data.

How It’s Used: Optane has already had an impact throughout the world. Here are a few examples:

Intel Optane SSDs integrated into IBM Cloud’s bare metal servers have enabled up to 7.5 times improvement — especially for applications that have high write-intensive operations.

Using Intel Optane Technology, the University of Pisa has reduced MRI scan times from 42 minutes to 4 minutes.

Intel Optane has enabled IFLYTEK, a Chinese information technology company, to enable faster voice and facial recognition services.

Intel’s QLC 3D NAND products announced today at Flash Memory Summit deliver new memory and storage solutions: Tencent, employing the new QLC PCIe Intel® SSD D5-P4320 in an initial production environment, increased by 10 times the number of customers served on a per-system basis.

How It’s Different: The Intel® SSD 660p (for client) and the Intel® SSD D5-P4320 (data center) are the world’s first QLC PCIe 3D NAND SSDs for their segments, offering the highest PCIe areal density on the market at an affordable price. With up to 2TB of storage in one drive for the 660p and 8TB for the P4320 (larger capacities coming later), these QLC SSDs have the capacity to replace hard drives. The 660p’s M.2 80mm form factor provides 2 times more capacity than TLC-based storage. In the data center, the P4320 enables users to store more, save more and do more than legacy solutions.

While Intel’s client solutions — including Intel Optane Memory and Intel Optane SSDs — have changed the PC space, Intel has set its sights on the data center. The challenges businesses face in managing vast amounts of data require the high performance of Intel Optane paired with the capacity-storage power of Intel QLC 3D NAND — two technologies that will transform the memory and storage tier.

More Context: Rob Crooke’s keynote address at Flash Memory Summit | Re-Architecting the Data Center for the Information Enlightenment Era (Rob Crooke Blog)
Click to expand...

Source: Intel Poised to Shape the Future of Memory and Storage with Optane + QLC | Intel Newsroom

Brink · Apr 10, 2019

Micron and Intel Extend Their Leadership in 3D NAND Flash Memory

Announce Qualification of Industry’s First 4 bits/cell 3D NAND and Development of 96-Layer 3D NAND Structure

News Highlights

Intel-Micron delivers the 1st commercially available 1Tb – 4bits/cell (QLC) die in the history of semiconductors

Qualification of 4bits/cell 3D NAND on 64 layer 2nd Gen 3D NAND has been completed. 4bits/cell (QLC) provides 33% higher density compared to 3bits/cell (TLC)

3rd Generation 3D NAND uses 96 layers to maintain cost/density leadership

3RD Generation 3D NAND enables the industry’s highest Gb/mm2 areal density

BOISE, Idaho and SANTA CLARA, Calif., May 21, 2018 – Micron Technology Inc. and Intel Corporation today announced production and shipment of the industry’s first 4bits/cell 3D NAND technology. Leveraging a proven 64-layer structure, the new 4bits/cell NAND technology achieves 1 terabit (Tb) density per die, the world’s highest-density flash memory.

The companies also announced development progress on the third-generation 96-tier 3D NAND structure, providing a 50 percent increase in layers. These advancements in the cell structure continue the companies’ leadership in producing the world’s highest Gb/mm2 areal density.

Both NAND technology advancements—the 64-layer QLC and 96-layer TLC technologies —utilize CMOS under the array (CuA) technology to reduce die sizes and deliver improved performance when compared to competitive approaches. By leveraging four planes vs the competitors’ two planes, the new Intel and Micron NAND flash memory can write and read more cells in parallel, which delivers faster throughput and higher bandwidth at the system level.

The new 64-layer 4bits/cell NAND technology enables denser storage in a smaller space, bringing significant cost savings for read-intensive cloud workloads. It is also well-suited for consumer and client computing applications, providing cost-optimized storage solutions.

“With introduction of 64-layer 4bits/cell NAND technology, we are achieving 33 percent higher array density compared to TLC, which enables us to produce the first commercially available 1 terabit die in the history of semiconductors,” said Micron Executive Vice President, Technology Development, Scott DeBoer. “We’re continuing flash technology innovation with our 96-layer structure, condensing even more data into smaller spaces, unlocking the possibilities of workload capability and application construction.”

“Commercialization of 1Tb 4bits/cell is a big milestone in NVM history and is made possible by numerous innovations in technology and design that further extend the capability of our Floating Gate 3D NAND technology,” said RV Giridhar, Intel vice president, Non-Volatile Memory Technology Development. “The move to 4bits/cell enables compelling new operating points for density and cost in Datacenter and Client storage.”
Click to expand...

Source: https://newsroom.intel.com/news-rele...-flash-memory/

fjk61011 · Apr 10, 2019

Intel Optane Memory

I'm waiting for an Intel Optane Memory Module to arrive.

In the meantime I'm following up

3 Installation Media Preperation (Recommended Optional Step) in

https://www.intel.com/content/dam/su...stallation.pdf

https://www.intel.com/content/dam/su...stallation.pdf

I get as far as Mount the Windows* Recovery Image:

dism/mountimage/imagefile:c:\Win10USB\windows\windows\system32\recovery\w inre.wim /Index:1 /mountdir:winre

and get

mountimage/imagefile is unknown.

Any ideas to get this working.

Windows 10: Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage

Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage

Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage

Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage

Combining Intel Optane memory H10 with QLC 3D NAND solid-state storage - Similar Threads - Combining Intel Optane

New Intel Optane Memory and Storage Management Help

Intel Optane memory software

Issues while launching Intel Optane Memory and Storage Management App

Intel Optane Memory and Storage Management App (Elevation problem?)

Intel Optane memory question

Intel Optane Memory Pinning Error

Combining Intel Optane and Intel QLC 3D NAND technologies

Micron and Intel Extend Their Leadership in 3D NAND Flash Memory

Intel Optane Memory