Windows 10: Samsung Begins Mass Production of First 12Gb LPDDR5 Mobile DRAM

Brink · Jul 18, 2019

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12GB LPDDR4X, further reinforcing the company’s premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

“With mass production of the 12Gb LPDDR5 built on Samsung’s latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide,” said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. “Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market.”

Thanks to its industry-leading speed and power efficiency, Samsung’s new mobile DRAM can enable next-generation flagship smartphones to fully leverage 5G and AI capabilities like ultra-high-definition video recording and machine learning, while greatly extending the battery life.

At a data rate of 5,500 megabits per second (Mb/s), the 12Gb LPDDR5 is approximately 1.3 times faster than previous mobile memory (LPDDR4X, 4266Mb/s) that is found in today’s high-end smartphones. When made into a 12GB package, the LPDDR5 is able to transfer 44GB of data, or about 12 full-HD (3.7GB-sized) movies, in only a second. The new chip also uses up to 30 percent less power than its predecessor by integrating a new circuit design with enhanced clocking, training and low-power feature that ensures stable performance even when operating at a blazingly fast speed.

In order to manage production capacity with more flexibility, Samsung is considering transferring its 12Gb LPDDR5 production to its Pyeongtaek (Korea) campus starting next year, depending on demand from global customers. Following its introduction of the 12Gb LPDDR5 mobile DRAM, Samsung expects to also develop a 16Gb LPDDR5 next year, to solidify its competitive edge in the global memory market.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Date Capacity Mobile DRAM July 2019 12GB 10nm-class 12Gb LPDDR5, 5500Mb/s June 2019 6GB 10nm-class 12Gb LPDDR5, 5500Mb/s Feb. 2019 12GB 10nm-class 16Gb LPDDR4X, 4266Mb/s April 2018 8GB (development) 10nm-class 8Gb LPDDR5, 6400Mb/s Sept. 2016 8GB 10nm-class 16Gb LPDDR4X, 4266Mb/s Aug. 2015 6GB 20nm 12Gb LPDDR4, 4266Mb/s Dec. 2014 4GB 20nm 8Gb LPDDR4, 3200Mb/s Sept. 2014 3GB 20nm 6Gb LPDDR3, 2133Mb/s Nov. 2013 3GB 20nm-class 6Gb LPDDR3, 2133Mb/s July 2013 3GB 20nm-class 4Gb LPDDR3, 2133Mb/s April 2013 2GB 20nm-class 4Gb LPDDR3, 2133Mb/s Aug. 2012 2GB 30nm-class 4Gb LPDDR3, 1600Mb/s 2011 1/2GB 30nm-class 4Gb LPDDR2, 1066Mb/s 2010 512MB 40nm-class 2Gb MDDR, 400Mb/s 2009 256MB 50nm-class 1Gb MDDR, 400Mb/s
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Source: Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones – Samsung Global Newsroom

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Brink · Jul 18, 2019

Samsung launches new 12GB LPDDR4X Highest capacity Mobile DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

[table][tr]Date Capacity Mobile DRAM [/tr] [tr][td]Feb. 2019[/td] [td]12GB[/td] [td]1y-nm 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]July 2018[/td] [td]8GB[/td] [td]1y-nm 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]April 2018[/td] [td]8GB (development)[/td] [td]1x-nm 8Gb LPDDR5, 6400Mb/s[/td] [/tr] [tr][td]Sept. 2016[/td] [td]8GB[/td] [td]1x-nm 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]Aug. 2015[/td] [td]6GB[/td] [td]20nm (2z) 12Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]Dec. 2014[/td] [td]4GB[/td] [td]20nm (2z) 8Gb LPDDR4, 3200Mb/s[/td] [/tr] [tr][td]Sept. 2014[/td] [td]3GB[/td] [td]20nm (2z) 6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]Nov. 2013[/td] [td]3GB[/td] [td]2y-nm 6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]July 2013[/td] [td]3GB[/td] [td]2y-nm 4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]April 2013[/td] [td]2GB[/td] [td]2y-nm 4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]Aug. 2012[/td] [td]2GB[/td] [td]30nm-class 4Gb LPDDR3, 1600Mb/s[/td] [/tr] [tr][td]2011[/td] [td]1/2GB[/td] [td]30nm-class 4Gb LPDDR2, 1066Mb/s[/td] [/tr] [tr][td]2010[/td] [td]512MB[/td] [td]40nm-class 2Gb MDDR, 400Mb/s[/td] [/tr] [tr][td]2009[/td] [td]256MB[/td] [td]50nm-class 1Gb MDDR, 400Mb/s[/td] [/tr] [/table]
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Source: https://news.samsung.com/us/samsung-...n-smartphones/

Brink · Jul 18, 2019

Samsung Mass Producing 2nd-Gen 10nm-Class LPDDR4X Mobile DRAM

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 2nd-generation of 10-nanometer-class* (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today’s premium smartphones and other mobile applications.

Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd– generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

“The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019.” said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. “We will continue to grow our premium DRAM lineup to lead the ‘high-performance, high capacity, and low power’ memory segment to meet the market demand and strengthen our business competitiveness.”

Samsung will be expanding its premium DRAM lineup that is based on the 1y-nm process by more than 70 percent. This initiative began with mass producing the first 10nm-class 8Gb DDR4 server DRAM last November and continues with this 16Gb LPDDR4X mobile memory chip only eight months later.

Samsung said that it has created an 8GB LPDDR4X mobile DRAM package by combining four of the 10nm-class 16Gb LPDDR4X DRAM chips (16Gb=2GB). This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20 percent from the 1st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.

With its LPDDR4X advancements, Samsung will be rapidly expanding its share of mobile DRAM in the market by providing a variety of high-capacity products, including 4GB, 6GB and 8GB LPDDR4X packages.

In line with its roll-out of 10nm-class LPDDR4X, Samsung has started operating a new DRAM production line in Pyeongtaek, Korea, to assure a stable supply of all mobile DRAM chips, in response to the increasing demand.

*10nm-class denotes a process technology node somewhere between 10 and 19 nanometers.

TIMELINE: Samsung’s Mass Production History of Mobile DRAM since 2012

[table][tr][td]1[/td] [td]2012.08[/td] [td]2GB[/td] [td]30nm-class[/td] [td]4Gb LPDDR3, 1600Mb/s[/td] [/tr] [tr][td]2[/td] [td]2013.04[/td] [td]2GB[/td] [td]20nm-class (2y)[/td] [td]4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]3[/td] [td]2013.11[/td] [td]3GB[/td] [td]20nm-class (2y)[/td] [td]6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]4[/td] [td]2014.09[/td] [td]3GB[/td] [td]20nm-class (2z)[/td] [td]6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]5[/td] [td]2014.12[/td] [td]4GB[/td] [td]20nm-class (2z)[/td] [td]8Gb LPDDR4, 3200Mb/s[/td] [/tr] [tr][td]6[/td] [td]2015.08[/td] [td]6GB[/td] [td]20nm-class (2z)[/td] [td]12Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]7[/td] [td]2016.09[/td] [td]8GB[/td] [td]10nm-class (1x)[/td] [td]16Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]8[/td] [td]2018.07[/td] [td]8GB[/td] [td]10nm-class (1y)[/td] [td]16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [/table]

(2018.07 Develops 10nm-class 8Gb LPDDR5, 6400Mb/s)
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Source: https://news.samsung.com/global/sams...4x-mobile-dram

Brink · Jul 18, 2019

Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency

The 1z-nm 8Gb DDR4 to be in mass production in the second half of this year

SEOUL, Korea ―March 21, 2019 ―Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.

As 1z-nm becomes the industry’s smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version.

Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.

“Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics. “As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”

Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6 that will power a wave of future digital innovation. Subsequent 1z-nm products with higher capacities and performance will allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for applications that include servers, graphics and mobile devices.

Following a full validation with a CPU manufacturer for eight-gigabyte (GB) DDR4 modules, Samsung will be actively collaborating with global customers to deliver an array of upcoming memory solutions.

In line with current industry needs, Samsung plans to increase the portion of its main memory production at its Pyeongtaek site, while working with its global IT clients to meet the rising demand for state-of-the-art DRAM products.
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Source: https://news.samsung.com/us/samsung-...-applications/

Windows 10: Samsung Begins Mass Production of First 12Gb LPDDR5 Mobile DRAM

Samsung Begins Mass Production of First 12Gb LPDDR5 Mobile DRAM

Samsung Begins Mass Production of First 12Gb LPDDR5 Mobile DRAM

Samsung Begins Mass Production of First 12Gb LPDDR5 Mobile DRAM

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