Windows 10: Samsung Doubling Smartphone Storage Speed with 512GB eUFS 3.0 V-NAND

Source: https://news.samsung.com/us/samsung-...12gb-eufs-3-0/

Tweet



— Twitter API (@User) View on Twiiter

:)

 

Samsung Starts Producing First 512-Gigabyte Universal Flash Storage

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards," said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world."





Consisting of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together, Samsung's new 512GB UFS doubles the density of Samsung's previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package. The eUFS' increased storage capacity will provide a much more extensive mobile experience. For example, the new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840x2160) video clips of a 10-minute duration,* which is about a tenfold increase over a 64GB eUFS which allows storing only about 13 of the same-sized video clips.

To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology in the 512GB eUFS' controller minimize the inevitable increase in energy consumed, which is particularly noteworthy since the new 512GB eUFS solution contains twice the number of cells compared to a 256GB eUFS. In addition, the 512GB eUFS' controller chip speeds up the mapping process for converting logical block addresses to those of physical blocks.

The Samsung 512GB eUFS also features strong read and write performance. With its sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively, the 512GB embedded memory enables transferring a 5GB-equivalent full HD video clip to an SSD in about six seconds, over eight times faster than a typical microSD card.

For random operations, the new eUFS can read 42,000 IOPS and write 40,000 IOPS. Based on the eUFS' rapid random writes, which are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card, mobile users can enjoy seamless multimedia experiences such as high-resolution burst shooting, as well as file searching and video downloading in dual-app viewing mode.

On a related note, Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production. This should meet the increase in demand for advanced embedded mobile storage, as well as for premium SSDs and removable memory cards with high density and performance.

 

Samsung Introduces New Branded SSD Powered by 3D V-NAND

Thanks for posting the article, very thorough write-up.

 

Samsung Starts Mass Production of Industry's First 3-bit 3D V-NAND Flash Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).

"With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business."

The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 128 gigabits (Gb) of memory storage.

In Samsung's V-NAND chip structure, each cell is electrically connected to a non-conductive layer using charge trap flash (CTF) technology. Each cell array is vertically stacked on top of one another to form multibillion-cell chips.

The use of 3 bit-per-cell, 32-layer vertically stacked cell arrays sharply raises the efficiency of memory production. Compared to Samsung's 10 nanometer-class* 3-bit planar NAND flash, the new 3-bit V-NAND has more than doubled wafer productivity.

Samsung introduced its first generation V-NAND (24 layer cells) in August 2013, and introduced its second generation V-NAND (32-layer) cell array structure in May 2014. With the launch of the 32-layer, 3-bit V-NAND, Samsung is leading the 3D memory era by speeding up the evolution of V-NAND production technology.

After having first produced SSDs based on 3-bit planar NAND flash in 2012, Samsung has proven that there is indeed a mass market for high-density 3-bit NAND SSDs.

The industry's first 3-bit 3D V-NAND will considerably expand market adoption of V-NAND memory, to SSDs suitable for general PC users, in addition to efficiently addressing the high-endurance storage needs of most servers today.