Windows 10: Samsung Mass Producing 2nd-Gen 10nm-Class LPDDR4X Mobile DRAM

Source: https://news.samsung.com/global/sams...4x-mobile-dram

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Samsung now producing more efficient 2nd gen DDR4 DRAM

Source: Samsung Now Mass Producing Industry’s First 2nd-generation, 10-Nanometer Class DRAM

 

Samsung Begins Mass Production of 10 nm-class 16 Gb LPDDR4X DRAM for Automobiles

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface with the highest density.

"The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere."








Moving a step beyond its 20nm-class 'Automotive Grade 2' DRAM, which can withstand temperatures from -40°C to 105°C, Samsung's 16Gb LPDDR4X is Automotive Grade 1-compliant, raising the high-end threshold to 125°C. By more than satisfying the rigorous on-system thermal cycling tests of global auto manufacturers, the 16Gb LPDDR4X has enhanced its reliability for a wide variety of automotive applications in many of the world's most challenging environments.

Adding to the degree of reliability under high temperatures, production at an advanced 10nm-class node is key to enabling the 16Gb LPDDR4X to deliver its leading-edge performance and power efficiency. Even in environments with extremely high temperatures of up to 125°C, its data processing speed comes in at 4,266 megabits per second (Mbps), a 14 percent increase from the 8Gb LPDDR4 DRAM that is based on 20nm process technology, and the new memory also registers a 30 percent increase in power efficiency.

Along with a 256 gigabyte (GB) embedded Universal Flash Storage (eUFS) drive announced in February, Samsung has expanded its advanced memory solution lineup for future automotive applications with the 10nm-class 16Gb LPDDR4X DRAM, commercially available in 12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its 10nm-class DRAM offerings, the company also plans on bolstering technology partnerships for automotive solutions that include vision ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.

 

Samsung Now Mass Producing Industry's First 2nd-Generation 10nm Class DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry's first 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8 Gb DDR4 features the highest performance and energy efficiency for an 8 Gb DRAM chip, as well as the smallest dimensions.

"By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability," said Gyoyoung Jin, president of Memory Business at Samsung Electronics. "Through a rapid ramp-up of the 2nd-generation 10 nm-class DRAM, we will expand our overall 10 nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness."





Samsung's 2nd-generation 10nm-class 8 Gb DDR4 features an approximate 30 percent productivity gain over the company's 1st-generation 10 nm-class 8 Gb DDR4. In addition, the new 8 Gb DDR4's performance levels and energy efficiency have been improved about 10 and 15 percent respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600 megabits per second (Mbps) per pin, compared to 3,200 Mbps of the company's 1x-nm 8 Gb DDR4.

To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme.

In the cells of Samsung's 2nd-generation 10 nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity.

The new 10 nm-class DRAM also makes use of a unique air spacer that has been placed around its bit lines to dramatically decrease parasitic capacitance. Use of the air spacer enables not only a higher level of scaling, but also rapid cell operation.

With these advancements, Samsung is now accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5 and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems and high-speed graphics cards.

Samsung has finished validating its 2nd-generation 10 nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

In addition, the world's leading DRAM producer expects to not only rapidly increase the production volume of the 2nd-generation 10nm-class DRAM lineups, but also to manufacture more of its mainstream 1st-generation 10 nm-class DRAM, which together will meet the growing demands for DRAM in premium electronic systems worldwide.