Windows 10: Samsung Begins Production of Fastest Storage for Flagship Smartphones

Brink · Mar 17, 2020

The new 512GB eUFS 3.1 stores 8K videos and large-size image files without buffering

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industryâs first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones. Delivering three times the write speed of the previous 512GB eUFS 3.0 mobile memory, Samsungâs new eUFS 3.1 breaks the 1GB/s performance threshold in smartphone storage.

âWith our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards,â said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. âThe new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.â

At a sequential write speed of over 1,200MB/s, Samsung 512GB eUFS 3.1 boasts more than twice the speed of a SATA-based PC (540MB/s) and over ten times the speed of a UHS-I microSD card (90MB/s). This means consumers can enjoy the speed of an ultra-slim notebook when storing massive files like 8K videos or several hundred large-size photos in their smartphones, without any buffering. Transferring contents from an old phone to a new device will also require considerably less time. Phones with the new eUFS 3.1 will only take about 1.5 minutes to move 100GB of data whereas UFS 3.0-based phones require more than four minutes.

In terms of random performance, the 512GB eUFS 3.1 processes up to 60 percent faster than the widely used UFS 3.0 version, offering 100,000 input/output operations per second (IOPS) for reads and 70,000 IOPS for writes.

Along with the 512GB option, Samsung will also have 256GB and 128GB capacities available for flagship smartphones that will be launched later this year.

Samsung began volume production of fifth-generation V-NAND at its new Xiâan, China, line (X2) this month to fully accommodate storage demand throughout the flagship and high-end smartphone market. The company soon plans to shift V-NAND volume production at its Pyeongtaek line (P1) in Korea from fifth-generation to sixth-generation V-NAND to better address the growing demand.

Samsung Embedded Storage Memory Lineup

Product Sequential Read Sequential Write Random Read Random Write 512GB eUFS 3.1
(March 2020) 2100MB/s 1200MB/s
(3X enhancement) 100,000 IOPS
(1.6X enhancement) 70,000 IOPS
(1.03X enhancement) 512GB eUFS 3.0
(Feb. 2019) 2100MB/s 410MB/s 63,000 IOPS 68,000 IOPS 1TB eUFS 2.1
(Jan. 2019) 1000MB/s 260MB/s 58,000 IOPS 50,000 IOPS 512GB eUFS 2.1
(Nov. 2017) 860MB/s 255MB/s 42,000 IOPS 40,000 IOPS Automotive UFS 2.1
(Sept. 2017) 850MB/s 150MB/s 45,000 IOPS 32,000 IOPS 256GB UFS Card
(July 2016) 530MB/s 170MB/s 40,000 IOPS 35,000 IOPS 256GB eUFS 2.0
(Feb. 2016) 850MB/s 260MB/s 45,000 IOPS 40,000 IOPS 128GB eUFS 2.0
(Jan. 2015) 350MB/s 150MB/s 19,000 IOPS 14,000 IOPS eMMC 5.1 250MB/s 125MB/s 11,000 IOPS 13,000 IOPS eMMC 5.0 250MB/s 90MB/s 7,000 IOPS 13,000 IOPS eMMC 4.5 140MB/s 50MB/s 7,000 IOPS 2,000 IOPS
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Source: Samsung Begins Mass Production of the Fastest Storage for Flagship Smartphones â Samsung Global Newsroom

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Cristian_25H · Mar 17, 2020

Samsung Begins Mass Producing Fastest Embedded NAND Storage for Smartphones/Tablets

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has now begun volume production of an ultra-fast embedded memory for smartphones, tablets and other mobile devices in 16-, 32- and 64-gigabyte (GB) densities.

The new Samsung eMMC (embedded multimedia card) Pro Class 1500 delivers the industry's fastest speeds for an embedded memory device, reading data sequentially at up to 140 megabytes per second (MB/s) and writing it at up to 50 MB/s. For random reading and writing, it can process up to 3500/1500 IOPS (inputs and outputs per second), four times the speed of previous eMMC solutions.

"With the production of 64 GB Samsung eMMC Pro Class 1500, we are delighted to provide the highest performing mobile storage solutions available that support the latest eMMC standard, for worldwide mobile device makers," said JaeHyeong Lee, vice president, Memory Product Planning & Application Engineering, Samsung Electronics. "We will confidently strengthen our research and development efforts to continually bring to market the most advanced mobile storage devices based on next-generation standards."

The Samsung eMMC Pro Class 1500 is designed for next generation premium mobile products. It will improve system performance and the user experience for a wide variety of applications including web browsing, 3D and HD video capture and playback, multi-tasking activities, augmented reality and the use of social networking sites and interactive graphics-rich gaming.

The ultra high-speed storage device uses Samsung's 64-gigabit (Gb) NAND with a toggle DDR 2.0 interface based on the company's latest 20 nanometer class process technology. The new eMMC's fully managed NAND memory comes with its own high performance controller and intelligent flash management firmware.

To meet the market need for thinner designs for high-end mobile devices, Samsung offers the new eMMCs in two, four- and eight-die stacks with the largest capacity of 64 GB's being only 1.2 millimeters thick.

Samsung eMMC Pro Class 1500 is the first to support the latest JEDEC e-MMC v4.5 specification that standardizes more features to improve performance, efficiency, security, and reliability such as: a SDR-200 Interface (200 MHz, 200 MB/s Max Bandwidth), cache handling, dynamic handling, file sanitizing and power-off notification.

Featuring highly reliable boot code and application storage, Samsung's 64 GB eMMC can store 16,000 MP3 files in a single package that weighs only 0.6 grams.

Samsung provided the first 64 GB eMMC in January of 2010 using 30nm-class 32 Gb NAND flash components.

Brink · Mar 17, 2020

Samsung Begins Mass Production of 16GB LPDDR5 DRAM for Smartphones

Based on Samsung’s 2nd-generation 10nm-class process technology, the 16GB LPDDR5 mobile DRAM package delivers industry’s highest performance and largest capacity

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 16-gigabyte (GB) LPDDR5 mobile DRAM package for next-generation premium smartphones. Following mass production of the industry-first 12GB LPDDR5 in July, 2019, the new 16GB advancement will lead the premium mobile memory market with added capacity that enables enhanced 5G and AI features including graphics-rich gaming and smart photography.

“Samsung has been committed to bringing memory technologies to the cutting edge in allowing consumers to enjoy amazing experiences through their mobile devices. We are excited to stay true to that commitment with our new, top-of-the-line mobile solution for global device manufacturers,” said Cheol Choi, senior vice president of memory sales & marketing, Samsung Electronics. “With the introduction of a new product lineup based on our next-generation process technology later this year, Samsung will be able to fully address future memory demands from global customers.”

Data transfer rate for the 16GB LPDDR5 comes in at 5,500 megabits per second (Mb/s), approximately 1.3 times faster than the previous mobile memory (LPDDR4X, 4266Mb/s). Compared to an 8GB LPDDR4X package, the new mobile DRAM delivers more than 20-percent energy savings while providing up to twice the capacity.

Samsung’s 16GB LPDDR5 mobile DRAM package consists of eight 12-gigabit (Gb) chips and four 8Gb chips, equipping premium smartphones with twice the DRAM capacity found in many higher-end laptops and gaming PCs today. Along with the blazing-fast performance, the industry’s largest capacity supports dynamic and responsive gameplay as well as ultra-high-resolution graphics on premium smartphones for highly immersive mobile gaming experiences.

As Samsung continues to expand LPDDR5 mobile DRAM production at its Pyeongtaek site, the company plans to mass-produce 16Gb LPDDR5 products based on third-generation 10nm-class (1z) process technology in the second half of this year, in line with the development of a 6,400Mb/s chipset. Such relentless innovation is expected to well-position Samsung to further solidify its competitive edge in markets such as premium mobile devices, high-end PCs and automotive applications.

Samsung Mobile DRAM Timeline: Production/Mass Prod.

[table][tr]Date Capacity Mobile DRAM [/tr] [tr][td]Dec. 2019[/td] [td]16GB[/td] [td]10nm-class 12Gb+8Gb LPDDR5, 5500Mb/s[/td] [/tr] [tr][td]Sept. 2019[/td] [td]12GB (uMCP)[/td] [td]10nm-class 24Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]07.01.19[/td] [td]12GB[/td] [td]10nm-class 12Gb LPDDR5, 5500Mb/s[/td] [/tr] [tr][td]06.01.19[/td] [td]6GB[/td] [td]10nm-class 12Gb LPDDR5, 5500Mb/s[/td] [/tr] [tr][td]Feb. 2019[/td] [td]12GB[/td] [td]10nm-class 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]07.01.18[/td] [td]8GB[/td] [td]10nm-class 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]04.01.18[/td] [td]8GB (development)[/td] [td]10nm-class 8Gb LPDDR5, 6400Mb/s[/td] [/tr] [tr][td]Sept. 2016[/td] [td]8GB[/td] [td]10nm-class 16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [tr][td]Aug. 2015[/td] [td]6GB[/td] [td]20nm 12Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]Dec. 2014[/td] [td]4GB[/td] [td]20nm 8Gb LPDDR4, 3200Mb/s[/td] [/tr] [tr][td]Sept. 2014[/td] [td]3GB[/td] [td]20nm 6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]Nov. 2013[/td] [td]3GB[/td] [td]20nm-class 6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]07.01.13[/td] [td]3GB[/td] [td]20nm-class 4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]04.01.13[/td] [td]2GB[/td] [td]20nm-class 4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]Aug. 2012[/td] [td]2GB[/td] [td]30nm-class 4Gb LPDDR3, 1600Mb/s[/td] [/tr] [tr][td]2011[/td] [td]1/2GB[/td] [td]30nm-class 4Gb LPDDR2, 1066Mb/s[/td] [/tr] [tr][td]2010[/td] [td]512MB[/td] [td]40nm-class 2Gb MDDR, 400Mb/s[/td] [/tr] [tr][td]2009[/td] [td]256MB[/td] [td]50nm-class 1Gb MDDR, 400Mb/s[/td] [/tr] [/table]
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Source: Samsung Begins Mass Production of Industry’s First 16GB LPDDR5 DRAM for Next-Generation Premium Smartphones - Samsung US Newsroom

Brink · Mar 17, 2020

Samsung breaks 1TB threshold for eUFS Smartphone storage

Powered by the company’s fifth-generation V-NAND, the new Universal Flash Storage offers 20x more storage than a 64GB internal memory and 10x the speed of a typical microSD card for data-intensive applications

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”

Within the same package size (11.5mm x 13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version by combining 16 stacked layers of Samsung’s most advanced 512-gigabit (Gb) V-NAND flash memory and a newly developed proprietary controller. Smartphone users will now be able to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS also possesses exceptional speed, allowing users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000 megabytes per second (MB/s), the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.

* Reference: Comparison of Internal Memory Performance

[table][tr][td]Memory[/td] [td]Sequential Read Speed[/td] [td]Sequential Write Speed[/td] [td]Random Read Speed[/td] [td]Random Write Speed[/td] [/tr] [tr][td]Samsung 1TB eUFS 2.1 (Jan. 2019)[/td] [td]1000 MB/s[/td] [td]260 MB/s[/td] [td]58,000 IOPS[/td] [td]50,000 IOPS[/td] [/tr] [tr][td]Samsung 512GB eUFS 2.1 (Nov. 2017)[/td] [td]860 MB/s[/td] [td]255 MB/s[/td] [td]42,000 IOPS[/td] [td]40,000 IOPS[/td] [/tr] [tr][td]Samsung eUFS 2.1 for automotive (Sept. 2017)[/td] [td]850 MB/s[/td] [td]150 MB/s[/td] [td]45,000 IOPS[/td] [td]32,000 IOPS[/td] [/tr] [tr][td]Samsung 256GB UFS Card (July 2016)[/td] [td]530 MB/s[/td] [td]170 MB/s[/td] [td]40,000 IOPS[/td] [td]35,000 IOPS[/td] [/tr] [tr][td]Samsung 256GB eUFS 2.0 (Feb. 2016)[/td] [td]850 MB/s[/td] [td]260 MB/s[/td] [td]45,000 IOPS[/td] [td]40,000 IOPS[/td] [/tr] [tr][td]Samsung 128GB eUFS 2.0 (Jan. 2015)[/td] [td]350 MB/s[/td] [td]150 MB/s[/td] [td]19,000 IOPS[/td] [td]14,000 IOPS[/td] [/tr] [tr][td]eMMC 5.1[/td] [td]250 MB/s[/td] [td]125 MB/s[/td] [td]11,000 IOPS[/td] [td]13,000 IOPS[/td] [/tr] [tr][td]eMMC 5.0[/td] [td]250 MB/s[/td] [td]90 MB/s[/td] [td]7,000 IOPS[/td] [td]13,000 IOPS[/td] [/tr] [tr][td]eMMC 4.5[/td] [td]140 MB/s[/td] [td]50 MB/s[/td] [td]7,000 IOPS[/td] [td]2,000 IOPS[/td] [/tr] [/table]
Click to expand...

Source: https://news.samsung.com/global/sams...-flash-storage

Windows 10: Samsung Begins Production of Fastest Storage for Flagship Smartphones

Samsung Begins Production of Fastest Storage for Flagship Smartphones

Samsung Begins Production of Fastest Storage for Flagship Smartphones

Samsung Begins Production of Fastest Storage for Flagship Smartphones

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