Windows 10: Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

Brink · Mar 23, 2019

New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency

The 1z-nm 8Gb DDR4 to be in mass production in the second half of this year

SEOUL, Korea ―March 21, 2019 ―Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.

As 1z-nm becomes the industry’s smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version.

Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.

“Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics. “As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”

Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6 that will power a wave of future digital innovation. Subsequent 1z-nm products with higher capacities and performance will allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for applications that include servers, graphics and mobile devices.

Following a full validation with a CPU manufacturer for eight-gigabyte (GB) DDR4 modules, Samsung will be actively collaborating with global customers to deliver an array of upcoming memory solutions.

In line with current industry needs, Samsung plans to increase the portion of its main memory production at its Pyeongtaek site, while working with its global IT clients to meet the rising demand for state-of-the-art DRAM products.
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Source: https://news.samsung.com/us/samsung-...-applications/

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Brink · Mar 23, 2019

Samsung now producing more efficient 2nd gen DDR4 DRAM

Samsung Electronics, the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 2nd-generation of 10-nanometer class* (1y-nm), 8-gigabit (Gb) DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions.

“By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability,” said Gyoyoung Jin, president of Memory Business at Samsung Electronics. “Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.”

Samsung’s 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30 percent productivity gain over the company’s 1st–generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4’s performance levels and energy efficiency have been improved about 10 and 15 percent respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600 megabits per second (Mbps) per pin, compared to 3,200 Mbps of the company’s 1x-nm 8Gb DDR4.

To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive “air spacer” scheme.

In the cells of Samsung’s 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity.

The new 10nm-class DRAM also makes use of a unique air spacer that has been placed around its bit lines to dramatically decrease parasitic capacitance**. Use of the air spacer enables not only a higher level of scaling, but also rapid cell operation.

With these advancements, Samsung is now accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5 and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems and high-speed graphics cards.

Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

In addition, the world’s leading DRAM producer expects to not only rapidly increase the production volume of the 2nd-generation 10nm-class DRAM lineups, but also to manufacture more of its mainstream 1st-generation 10nm-class DRAM, which together will meet the growing demands for DRAM in premium electronic systems worldwide.
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Source: Samsung Now Mass Producing Industry’s First 2nd-generation, 10-Nanometer Class DRAM

Brink · Mar 23, 2019

Samsung Mass Producing 2nd-Gen 10nm-Class LPDDR4X Mobile DRAM

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 2nd-generation of 10-nanometer-class* (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today’s premium smartphones and other mobile applications.

Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd– generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

“The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019.” said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. “We will continue to grow our premium DRAM lineup to lead the ‘high-performance, high capacity, and low power’ memory segment to meet the market demand and strengthen our business competitiveness.”

Samsung will be expanding its premium DRAM lineup that is based on the 1y-nm process by more than 70 percent. This initiative began with mass producing the first 10nm-class 8Gb DDR4 server DRAM last November and continues with this 16Gb LPDDR4X mobile memory chip only eight months later.

Samsung said that it has created an 8GB LPDDR4X mobile DRAM package by combining four of the 10nm-class 16Gb LPDDR4X DRAM chips (16Gb=2GB). This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20 percent from the 1st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.

With its LPDDR4X advancements, Samsung will be rapidly expanding its share of mobile DRAM in the market by providing a variety of high-capacity products, including 4GB, 6GB and 8GB LPDDR4X packages.

In line with its roll-out of 10nm-class LPDDR4X, Samsung has started operating a new DRAM production line in Pyeongtaek, Korea, to assure a stable supply of all mobile DRAM chips, in response to the increasing demand.

*10nm-class denotes a process technology node somewhere between 10 and 19 nanometers.

TIMELINE: Samsung’s Mass Production History of Mobile DRAM since 2012

[table][tr][td]1[/td] [td]2012.08[/td] [td]2GB[/td] [td]30nm-class[/td] [td]4Gb LPDDR3, 1600Mb/s[/td] [/tr] [tr][td]2[/td] [td]2013.04[/td] [td]2GB[/td] [td]20nm-class (2y)[/td] [td]4Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]3[/td] [td]2013.11[/td] [td]3GB[/td] [td]20nm-class (2y)[/td] [td]6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]4[/td] [td]2014.09[/td] [td]3GB[/td] [td]20nm-class (2z)[/td] [td]6Gb LPDDR3, 2133Mb/s[/td] [/tr] [tr][td]5[/td] [td]2014.12[/td] [td]4GB[/td] [td]20nm-class (2z)[/td] [td]8Gb LPDDR4, 3200Mb/s[/td] [/tr] [tr][td]6[/td] [td]2015.08[/td] [td]6GB[/td] [td]20nm-class (2z)[/td] [td]12Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]7[/td] [td]2016.09[/td] [td]8GB[/td] [td]10nm-class (1x)[/td] [td]16Gb LPDDR4, 4266Mb/s[/td] [/tr] [tr][td]8[/td] [td]2018.07[/td] [td]8GB[/td] [td]10nm-class (1y)[/td] [td]16Gb LPDDR4X, 4266Mb/s[/td] [/tr] [/table]

(2018.07 Develops 10nm-class 8Gb LPDDR5, 6400Mb/s)
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Source: https://news.samsung.com/global/sams...4x-mobile-dram

malware · Mar 23, 2019

Samsung Announces First Validated 40-nanometer Class DRAM

Samsung Electronics announced today that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) – both to be processed at 40-nm – have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.

The migration to 40-nm class process technology is expected to accelerate the time-to-market cycle by 50 percent – to just one year. Samsung plans to apply its 40-nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.

The new 40-nm class process technology will drive further reductions in voltage against a 50-nm class device, which Samsung expects to translate into about a 30 percent power savings

The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology.

In addition, Samsung expects that its 40-nm process node will mark a significant step toward the development of next generation, ultra-high performance DRAM technologies such as DDR4.

Source: Samsung

Windows 10: Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

Samsung develops first 3rd gen 10 nm class 8GB DDR4 DRAM

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